Cantilever signature of tip detachment during contact resonance AFM

• Devin Kalafut,
• Ryan Wagner,
• Maria Jose Cadena,
• Anil Bajaj and
• Arvind Raman

Beilstein J. Nanotechnol. 2021, 12, 1286–1296, doi:10.3762/bjnano.12.96

• connect the qualitative and quantitative behavior to experimental features. Keywords: atomic force microscopy (AFM); contact resonance; nonlinear normal mode (NNM); tip–sample detachment; photothermal excitation; Introduction Contact resonance atomic force microscopy (CR-AFM) [1][2], piezoresponse force

Application of contact-resonance AFM methods to polymer samples

• Sebastian Friedrich and
• Brunero Cappella

Beilstein J. Nanotechnol. 2020, 11, 1714–1727, doi:10.3762/bjnano.11.154

• obtained sample thickness could be varied. Films with a thickness larger than 400 nm are considered as bulk, since the substrate does not influence the mechanical properties of the sample [31]. Contact-resonance mode AFM Contact-resonance atomic force microscopy (CR-AFM) measurements have been performed

Subsurface imaging of flexible circuits via contact resonance atomic force microscopy

• Wenting Wang,
• Chengfu Ma,
• Yuhang Chen,
• Lei Zheng,
• Huarong Liu and
• Jiaru Chu

Beilstein J. Nanotechnol. 2019, 10, 1636–1647, doi:10.3762/bjnano.10.159

• , Anhui, China 10.3762/bjnano.10.159 Abstract Subsurface imaging of Au circuit structures embedded in poly(methyl methacrylate) (PMMA) thin films with a cover thickness ranging from 52 to 653 nm was carried out by using contact resonance atomic force microscopy (CR-AFM). The mechanical difference of the

• force microscopy (AFM); contact resonance atomic force microscopy (CR-AFM); contact stiffness; defect detection; flexible circuits; subsurface imaging; Introduction With the rapid shrinkage of microelectronic devices, flexible circuits are intensively used while being functionalized as supercapacitors

• ) has emerged as a promising way. Various SPM-based nanoscale subsurface imaging methods have been proposed that rely on different detection mechanisms including thermal, magnetic, electric, and mechanical sensing. Among them, contact resonance atomic force microscopy (CR-AFM) demonstrates the unique

Nanometer-resolved mechanical properties around GaN crystal surface steps

• Jörg Buchwald,
• Marina Sarmanova,
• Bernd Rauschenbach and
• Stefan G. Mayr

Beilstein J. Nanotechnol. 2014, 5, 2164–2170, doi:10.3762/bjnano.5.225

• element approach (FEM). We show that the breakdown of half-space symmetry leads to an “artificial” reduction of the elastic properties of comparable lateral dimensions which overlays the effect of surface stress. Contact resonance atomic force microscopy (CR-AFM) was used to compare the simulation results

• with experiments. Keywords: finite elements; gallium nitride; indentation; mechanical properties; molecular dynamics; nanostructures; Introduction Recently developed scanning probe-based techniques, such as contact resonance atomic force microscopy (CR-AFM) [1][2], allow for the assessment of

Frequency, amplitude, and phase measurements in contact resonance atomic force microscopies

• Gheorghe Stan and
• Santiago D. Solares

Beilstein J. Nanotechnol. 2014, 5, 278–288, doi:10.3762/bjnano.5.30

• , and phase response of the first two eigenmodes of two contact-resonance atomic force microscopy (CR-AFM) configurations, which differ in the method used to excite the system (cantilever base vs sample excitation), are analyzed in this work. Similarities and differences in the observables of the